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LLC resonant DC‑to‑DC power converter with synchronous rectifiers using high‑ and medium‑voltage gallium nitride‑based transistors
600 V p‑type gate‑doped enhancement mode gallium nitride‑based transistors for AC‑to‑DC power factor‑corrected rectifiers operating at 200 kHz
Practical power module implemented with bare dies on aluminum metal PCB substrate for AC‑to‑DC bridgeless dual‑boost power factor corrected rectifier
Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs
Haihong Qin Ceyu Ma Ziyue Zhu Yangguang Yan
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255
ISSN : 1598 - 2092
eISSN : 2093 - 4718